Impact of the Ohmic Electrode on the Endurance of Oxide-Based Resistive Switching Memory

As one of the key aspects in reliability redox-based resistive switching memories (ReRAMs), maximizing their endurance is high relevance for industrial applications. The major limitation regarding considered excessive generation oxygen vacancies during cycling, which eventually leads to irreversible RESET failures. Thus, could be increased by using combinations oxide and ohmic electrode (OE) metal that provides a barrier [defect formation energy (DFE)]. In this work, we present sophisticated programming algorithm aims maximize within reasonable measurement time. Using algorithm, compare ReRAM devices with four different OE metals confirm theoretically predicted trend. our work valuable information device engineering toward higher endurance.